TOKYO, August 17, 2016 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of a new transfer-mold power semiconductor model in its lineup of Super-mini Dual-In-line Package Intelligent Power Modules (DIPIPM™), embedded with Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC-MOSFET). It will launch on August 17.

Super-mini Full SiC DIPIPM

Product Features

1)
Top class low power consumption in the home appliance market
-SiC-MOSFET reduces power consumption by about 70 percent compared with Mitsubishi Electric's existing Super-mini DIPIPM, and contributes to an overall reduction in air conditioner power consumption
2)
Simplified inverter system design
-Footprint and pin configurations are compatible with Mitsubishi Electric's existing Super mini DIPIPM Ver.6, PSSxxS92x6series,etc.
-Designed with a high threshold voltage, SiC-MOSFET does not require a negative bias circuit, allowing simplification of the system design
-Fewer external components due to use of embedded bootstrap diode with current-limiting resistor
Sales Schedule
Model Specification Shipment
PSF15S92F6 15A/600V August 17, 2016

Note that the releases are accurate at the time of publication but may be subject to change without notice.